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Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors

机译：低温In0.3Ga0.7as和In0.53Ga0.47as-In0.52al0.48as半导体太赫兹光电导体的优化和温度依赖特性

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I. Kostakis; M. Missous;
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年度 2013
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1. Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors [J] . I. Kostakis, M. Missous AIP Advances . 2013,第9期

机译：低温In0.3Ga0.7As和In0.53Ga0.47As-In0.52Al0.48As半导体太赫兹光电导体的优化及温度依赖性
2. Terahertz generation by photoconductors made from low-temperature-grown GaAs annealed at moderate temperatures [J] . Biciunas A.Geizutis A.Krotkus A. Electronics Letters . 2011,第2期

机译：由低温生长的GaAs制成的光电导体产生太赫兹，并在中等温度下进行退火
3. Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr_(1_x)Mg_xO_2 semiconductor films [J] . X. R. Li, M. J. Han, P. Chang, Applied Physics Letters . 2014,第1期

机译：p型透明导电CuCr_（1_x）Mg_xO_2半导体薄膜中太赫兹光学特性与载流子传输动力学的温度依赖性
4. Temperature dependence of the Faraday effect of moderately doped semiconductors at terahertz frequencies [C] . Nagashima T., Hangyo M., Roskos H.G. Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on . 2004

机译：太赫兹频率下中度掺杂半导体的法拉第效应的温度依赖性
5. Maximizing terahertz pulse amplitude from low temperature gallium arsenide photo conductive semiconductor switch. [D] . Ray, Sampad. 2011

机译：最大限度地提高低温砷化镓光电导半导体开关的太赫兹脉冲幅度。
6. Influence Analysis and Optimization for Aggregate Morphological Characteristics on High- and Low-Temperature Viscoelasticity of Asphalt Mixtures [O] . Yongchun Cheng, Wensheng Wang, Jinglin Tao, 2018

机译：总体形态特征对沥青混合料高温和低温粘弹性的影响分析与优化
7. Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors [O] . I. Kostakis, M. Missous 2013

机译：低温In0.3Ga0.7as和In0.53Ga0.47as-In0.52al0.48as半导体太赫兹光电导体的优化和温度依赖特性

Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors

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